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Número de pieza | HMC265 | |
Descripción | GaAs MMIC SUB-HARMONICALLY PUMPED DOWNCONVERTER/ 20 - 32 GHz | |
Fabricantes | Hittite Microwave Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HMC265 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MICROWAVE CORPORATION
HMC265
GaAs MMIC SUB-HARMONICALLY
PUMPED DOWNCONVERTER, 20 - 32 GHz
Typical Applications
The HMC265 is ideal for:
• Microwave Point to Point Radios
• LMDS
• SATCOM
Functional Diagram
5
Features
Integrated LO Amplifier: -4 dBm Input
Sub-Harmonically Pumped (x2) LO
Integrated IF Amplifier: 3 dB Gain
Small Size: 1.32mm x 1.32mm
General Description
The HMC265 chip is a sub-harmonically pumped
(x2) MMIC downconverter with integrated LO & IF
amplifiers. The chip utilizes a GaAs PHEMT tech-
nology that results in a small overall chip area of
1.74 mm2. The 2LO to RF isolation is excellent
eliminating the need for additional filtering. The
LO amplifier is a single bias (+3V to +4V) two
stage design with only -4 dBm nominal drive
requirement. All data is with the chip in a 50
ohm test fixture connected via 0.025 mm (1 mil)
diameter wire bonds of minimal length <0.31 mm
(<12 mils). This downconverter IC is an excellent,
smaller, and more reliable replacement to hybrid
diode based downconverter MMIC assemblies.
5 - 58
Electrical Specifications, TA = +25° C, LO Drive = -4 dBm
Parameter
IF = 1 GHz
Vdd = +4V
Min. Typ. Max.
Min.
Frequency Range, RF
20 - 32
Frequency Range, LO
10 - 16
Frequency Range, IF
0.7 - 3.0
Conversion Gain (RF to IF)
-2 3
7 -2
Noise Figure (SSB)
13
2LO to RF Isolation
17 20 ~ 40
28
2LO to IF Isolation
40 50 ~ 60
45
IP3 (Input)
2 10
9
1 dB Compression (Input)
-5 2
-2
Supply Current (Idd)
50
IF = 1 GHz
Vdd = +4V
Typ.
27 - 30
13.5 - 15
0.7 - 3.0
2
13
35
55
13
2
50
Max.
5
Units
GHz
GHz
GHz
dB
dB
dB
dB
dBm
dBm
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page v01.0701
MICROWAVE CORPORATION
HMC265
GaAs MMIC SUB-HARMONICALLY
PUMPED DOWNCONVERTER, 20 - 32 GHz
MIC Assembly Techniques
5
Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order
to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3
mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer
capacitor (mounted eutectically or by conductive epoxy) placed no further than
0.762mm (30 mils) from the chip is recommended. The photo in figure 3 shows a
typical assembly for the HMC265 MMIC chip.
Figure 3: Typical HMC265 Assembly
5 - 62
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet HMC265.PDF ] |
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