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Número de pieza | HM628511HJPI-15 | |
Descripción | 4M High Speed SRAM (512-kword x 8-bit) | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HM628511HJPI-15 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! HM628511HI Series
4M High Speed SRAM (512-kword × 8-bit)
ADE-203-1035A (Z)
Rev. 1.0
Apr. 15, 1999
Description
The HM628511HI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized
high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high
speed circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 36-pin plastic SOJ.
Features
• Single 5.0 V supply : 5.0 V ± 10 %
• Access time 12 /15 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current : 160 / 140 mA (max)
• TTL standby current : 60 / 50 mA (max)
• CMOS standby current : 5 mA (max)
• Center VCC and VSS type pinout
• Temperature range: –40 to 85°C
1 page HM628511HI Series
DC Characteristics (Ta = –40 to +85°C, VCC = 5.0 V ± 10 %, VSS = 0V)
Parameter
Symbol Min
Input leakage current
IILII
Output leakage current
IILOI
Operation power
supply current
12 ns cycle ICC
—
—
—
Standby power supply
current
15 ns cycle ICC
12 ns cycle ISB
15 ns cycle ISB
I SB1
—
—
—
—
Typ*1
—
—
—
Max
2
2
160
Unit
µA
µA
mA
— 140
— 60 mA
— 50
0.1 5
mA
Output voltage
VOL — — 0.4 V
VOH 2.4 — — V
Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed.
Test conditions
Vin = VSS to VCC
Vin = VSS to VCC
Min cycle
CS = VIL, lout = 0 mA
Other inputs = VIH/VIL
Min cycle, CS = VIH,
Other inputs = VIH/VIL
f = 0 MHz
VCC ≥ CS ≥ VCC - 0.2 V,
(1) 0 V ≤ Vin ≤ 0.2 V or
(2) VCC ≥ Vin ≥ VCC - 0.2 V
IOL = 8 mA
IOH = –4 mA
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol Min
Typ
Input capacitance*1
Cin —
—
Input/output capacitance*1
CI/O
—
—
Note: 1. This parameter is sampled and not 100% tested.
Max
6
8
Unit
pF
pF
Test conditions
Vin = 0 V
VI/O = 0 V
5
5 Page Package Dimensions
HM628511HJPI Series (CP-36D)
23.25
23.62 Max
36 19
HM628511HI Series
Unit: mm
1
0.74
1.30 Max
18
0.43 ± 0.10
0.41 ± 0.08
1.27
0.10
Dimension including the plating thickness
Base material dimension
9.40 ± 0.25
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
CP-36D
Conforms
Conforms
1.4 g
11
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet HM628511HJPI-15.PDF ] |
Número de pieza | Descripción | Fabricantes |
HM628511HJPI-12 | 4M High Speed SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
HM628511HJPI-15 | 4M High Speed SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
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