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Datasheet BZX84C8V2S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BZX84C8V2S | DUAL 200mW SURFACE MOUNT ZENER DIODE BZX84C2V4S - BZX84C39S
DUAL 200mW SURFACE MOUNT ZENER DIODE Features
· · · · Planar Die Construction 200mW Power Dissipation Zener Voltages from 2.4V - 39V Ultra-Small Surface Mount Package
SOT-363
A
Dim
C1 A1 NC
Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 0°
Max 0.30 1.35 2.20 0.40 2.20 |  Diodes Incorporated | diode |
| 2 | BZX84C8V2SEW | Silicon Zener Diode, Rectifier BZX84C…SEW Series
SILICON PLANAR ZENER DIODES
3
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation
Operating Junction and Storage Temperature Range
12
1. Anode 3. Cathode
Symbol PD
Tj ,TS
Value
200 - 55 to + 150
Unit
mW OC
Electrical Characteristics ( Ta = 25 OC unless other |  SEMTECH | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju  COS  | ||
| 2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS | ||
| 3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS | ||
| 4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS | ||
| 5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS | ||
| 6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS | ||
| 7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS |
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