DataSheet.es    


Datasheet WNM4153 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1WNM4153N-Channel MOSFET

WNM4153 N-Channel, 20V, 0.88A, Small Signal MOSFET VDS (V) 20 RDS(on) (Ω) 0.220 @ VGS=4.5V 0.260 @ VGS=2.5V 0.320 @ VGS=1.8V Descriptions The WNM4153 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate
Will Semiconductor
Will Semiconductor
mosfet


WNM Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1WNM01N10MOSFET, Transistor

WNM01N10 Single N-Channel, 100V, 1.7A, Power MOSFET VDS (V) 100 Typical Rds(on) (Ω) 0.235@ VGS=10V 0.255@ VGS=4.5V Descriptions The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This
WillSEMI
WillSEMI
mosfet
2WNM01N11MOSFET, Transistor

WNM01N11 Single N-Channel, 110V, 1.8A, Power MOSFET VDS (V) 110 Typical Rds(on) (Ω) 0.230@ VGS=10V 0.250@ VGS=4.5V WNM01N11 Http://www.sh-willsemi.com Descriptions The WNM01N11 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellen
WillSEMI
WillSEMI
mosfet
3WNM05N60MOSFET, Transistor

WillSEMI
WillSEMI
mosfet
4WNM05N60FMOSFET, Transistor

WillSEMI
WillSEMI
mosfet
5WNM07N60N-Channel MOSFET

WNM07N60/WNM07N60F 600V N-Channel MOSFET Description The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, po
Will Semiconductor
Will Semiconductor
mosfet
6WNM07N60FN-Channel MOSFET

WNM07N60/WNM07N60F 600V N-Channel MOSFET Description The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, po
Will Semiconductor
Will Semiconductor
mosfet
7WNM07N65N-Channel MOSFET

WNM07N65/WNM07N65F 650V N-Channel MOSFET Description The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, po
Will Semiconductor
Will Semiconductor
mosfet
8WNM07N65FN-Channel MOSFET

WNM07N65/WNM07N65F 650V N-Channel MOSFET Description The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, po
Will Semiconductor
Will Semiconductor
mosfet
9WNM12N65N-Channel MOSFET

WNM12N65/WNM12N65F 650V N-Channel MOSFET Description The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, po
Will Semiconductor
Will Semiconductor
mosfet



Esta página es del resultado de búsqueda del WNM4153. Si pulsa el resultado de búsqueda de WNM4153 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap