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Datasheet SIC9752 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SIC9752 | High Precision Non-Isolated Buck APFC LED Drive 深圳深爱半导体股份有限公司 Shenzhen SI Semiconductors Co., LTD.
High Precision Non-Isolated Buck APFC LED Drive
产品规格书 Product Specification
SIC9752/SIC9753/SIC9754
General Description
The SIC9752/SIC9753/SIC9754 are constant current LED regulators with high current accuracy |  SI Semiconductors | led |
SIC Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SIC02A065NS | SILICON CARBIDE SCHOTTKY DIODE SiC02A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M  Pan Jit International diode | | |
| 2 | SIC02A065T | SILICON CARBIDE SCHOTTKY DIODE SiC02A065T
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mo Pan Jit International diode | | |
| 3 | SIC02A120S | SILICON CARBIDE SCHOTTKY DIODE SiC02A120S
SILICON CARBIDE SCHOTTKY DIODE
Voltage 1200 V Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mol Pan Jit International diode | | |
| 4 | SIC04A065ND | SILICON CARBIDE SCHOTTKY DIODE SiC04A065ND
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | | |
| 5 | SIC04A065NS | SILICON CARBIDE SCHOTTKY DIODE SiC04A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | | |
| 6 | SIC04A065T | SILICON CARBIDE SCHOTTKY DIODE SiC04A065T
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mo Pan Jit International diode | | |
| 7 | SiC06A065ND | SILICON CARBIDE SCHOTTKY DIODE SiC06A065ND
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
6A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | |
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