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Datasheet WFU7N70S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | WFU7N70S | Power MOSFET, Transistor WFU7N70S
700V Super-Junction Power MOSFET
Features
� Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant
General Description
Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, mak |  Winsemi | mosfet |
WFU Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | WFU1N60 | Silicon N-Channel MOSFET Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
1N60 WFU WFU1
Silicon N-Channel MOSFET
Features
� � � � � 1.3A,600V,RDS(on)(Max 8.5Ω)@VGS=10V Ultra-low Gate Charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
Winsemi mosfet | | |
| 2 | WFU1N60C | Power MOSFET, Transistor WFU1N60C Product Description
Silicon N-Channel MOSFET
Features
� 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
General Description
Th is Power MOSFET is produced Winsemi mosfet | | |
| 3 | WFU1N60N | Silicon N-Channel MOSFET Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
U1N6 0N WF WFU1N6 U1N60
Silicon N-Ch annel MOS FET Cha OSF
Features
■1A,600V, RDS(on)(Max 15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperatu Winsemi mosfet | | |
| 4 | WFU1N80 | N-Channel MOSFET Wisdom Semiconductor
WFU1N80
N-Channel MOSFET
Features
■ RDS(on) (Max 18.0 Ω )@VGS=10V ■ Gate Charge (Typical 6.5nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced usi  Wisdom technologies mosfet | | |
| 5 | WFU20N06 | Silicon N-Channel MOSFET WFU20N06
Silicon N-Channel MOSFET
Features
■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MO S FE T is produced using W in se m i � Winsemi mosfet | | |
| 6 | WFU2N60 | Silicon N-Channel MOSFET Features
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 15.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
WFU2N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanc Winsemi mosfet | | |
| 7 | WFU2N60 | N-Channel MOSFET Wisdom Semiconductor
WFD/U2N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
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2. Drain
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1. Gate {
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● � Wisdom technologies mosfet | |
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