|
|
Datasheet WFU4N65S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | WFU4N65S | Power MOSFET, Transistor WFU4N65S Product Description
650V Super-Junction Power MOSFET
Features
� Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant
General Description
Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low | Winsemi | mosfet |
WFU Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | WFU1N60 | Silicon N-Channel MOSFET Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
1N60 WFU WFU1
Silicon N-Channel MOSFET
Features
� � � � � 1.3A,600V,RDS(on)(Max 8.5Ω)@VGS=10V Ultra-low Gate Charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
Winsemi mosfet | | |
2 | WFU1N60C | Power MOSFET, Transistor WFU1N60C Product Description
Silicon N-Channel MOSFET
Features
� 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
General Description
Th is Power MOSFET is produced Winsemi mosfet | | |
3 | WFU1N60N | Silicon N-Channel MOSFET Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
U1N6 0N WF WFU1N6 U1N60
Silicon N-Ch annel MOS FET Cha OSF
Features
■1A,600V, RDS(on)(Max 15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperatu Winsemi mosfet | | |
4 | WFU1N80 | N-Channel MOSFET Wisdom Semiconductor
WFU1N80
N-Channel MOSFET
Features
■ RDS(on) (Max 18.0 Ω )@VGS=10V ■ Gate Charge (Typical 6.5nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced usi Wisdom technologies mosfet | | |
5 | WFU20N06 | Silicon N-Channel MOSFET WFU20N06
Silicon N-Channel MOSFET
Features
■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MO S FE T is produced using W in se m i � Winsemi mosfet | | |
6 | WFU2N60 | Silicon N-Channel MOSFET Features
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 15.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
WFU2N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanc Winsemi mosfet | | |
7 | WFU2N60 | N-Channel MOSFET Wisdom Semiconductor
WFD/U2N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
◀
{
2. Drain
●
1. Gate {
▲
● � Wisdom technologies mosfet | |
Esta página es del resultado de búsqueda del WFU4N65S. Si pulsa el resultado de búsqueda de WFU4N65S se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |