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PDF ISH6N70 Data sheet ( Hoja de datos )
| Número de pieza | ISH6N70 | |
| Descripción | N-Channel Mosfet Transistor | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
ISH6N70
·FEATURES
·Static Drain-Source On-Resistance
: RDS(on) = 1.8Ω(Max)
·Low gate charge
·High switching speed
·Low input capacitance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·The ISH6N70 is universally applied in high efficiency switch
mode power supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
700 V
VGS Gate-Source Voltage-Continuous
±30
V
ID Drain Current-Continuous
6A
IDM Drain Current-Single Plused
24 A
PD Total Dissipation @TC=25℃
55 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.27 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 110 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet ISH6N70.PDF ] | |
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