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PDF IXTH48N20 Data sheet ( Hoja de datos )
| Número de pieza | IXTH48N20 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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Advance Technical Information
Standard
Power MOSFET
N-Channel Enhancement Mode
IXTH 48N20
VDSS = 200 V
ID (cont) = 48 A
RDS(on) = 50 mΩ
Symbol Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
200 V
200 V
±20 V
±30 V
48 A
192 A
48 A
30 mJ
1.0 J
5 V/ns
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
275 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
300 °C
Features
z International standard package
JEDEC TO-247 AD
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z High commutating dv/dt rating
z Fast switching times
Symbol Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VGS = ±20 V DC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 125°C
VGS = 10 V, ID = 15 A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
200
2.0
V
4.0 V
±100 nA
25 µA
250 µA
50 m Ω
Applications
z Switch-mode and resonant-mode
power supplies
z Motor controls
z Uninterruptible Power Supplies (UPS)
z DC choppers
Advantages
z Easy to mount with 1 screw
(isolated mounting screw hole)
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99021A(04/03)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXTH48N20.PDF ] | |
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