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Datasheet 10N60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 10N60 | N-Channel Power MOSFET, Transistor SEMICONDUCTOR
10N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (10A, 600Volts)
DESCRIPTION
The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. thr | nELL | mosfet |
2 | 10N60 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
10N60
·FEATURES ·Drain Current –ID= 9.2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.83Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive | Inchange Semiconductor | mosfet |
3 | 10N60 | N-CHANNEL MOSFET 10N60(F,B,H)
10A mps,600 Volts N-CHANNEL MOSFET
FEATURE
10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 10N60
ITO-220AB 10N60F
TO-263 10N60B
TO-262 10N60H
Absolute Maximum Ratings(TC=2 | CHONGQING PINGYANG | mosfet |
4 | 10N60 | 600/650 Volts N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
10N60
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state res | Unisonic Technologies | mosfet |
5 | 10N60A | SSP10N60A
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.)
SSP10N60A
BVDSS = 600 V RDS(on) = | Fairchild Semiconductor | data |
10N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 10N03L | IPP10N03L IPP10N03L IPB10N03L OptiMOS® Buck converter series
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 8.9 73
P- TO220 -3-1
V mΩ A
• Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM)
• Superior thermal resistance Infineon Technologies AG data | | |
2 | 10N120BND | HGTG10N120BND Data Sheet
HGTG10N120BND
December 2001
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipol Fairchild Semiconductor data | | |
3 | 10N15 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
10N15
Preliminary
10A, 150V, 0.3Ω, N-CHANNEL POWER MOSFETS
DESCRIPTION
The UTC 10N15 is an N-channel enhancement mode silicon-gate power field effect transistors, it uses UTC’s advanced technology to provide the customers with high breakdown voltage etc.
The Unisonic Technologies mosfet | | |
4 | 10N20 | FQB10N20 www.datasheet4u.com
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Fairchild Semiconductor data | | |
5 | 10N20C | FQP10N20C
FQP10N20C/FQPF10N20C
QFET
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially ta Fairchild Semiconductor data | | |
6 | 10N30 | 300V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N30
Preliminary Power MOSFET
10A, 300V N-CHANNEL POWER MOSFET
DESCRIPTION
1
The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a Unisonic Technologies mosfet | | |
7 | 10N361K | JVR10N361K METAL OXIDE VARISTOR 10mm Disc
Maximum Allowable Voltage Part Number Acrms JVR10N180M87orr JVR10N220L87orr JVR10N270K87orr JVR10N330K87orr JVR10N390K87orr JVR10N470K87orr JVR10N560K87orr JVR10N680K87orr JVR10N820K87orr JVR10N101K87orr JVR10N121K87orr JVR10N151K87orr JVR10N181K87orr JVR10N201K87orr J RFE international data | |
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Número de pieza | Descripción | Fabricantes | |
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