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K3515-01MR の電気的特性と機能

K3515-01MRのメーカーはFuji Electricです、この部品の機能は「MOSFET ( Transistor ) - 2SK3515-01MR」です。


製品の詳細 ( Datasheet PDF )

部品番号
K3515-01MR
部品説明
MOSFET ( Transistor ) - 2SK3515-01MR
メーカ
Fuji Electric
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K3515-01MR Datasheet, K3515-01MR PDF,ピン配置, 機能
2SK3515-01MR
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
450 V
Continuous drain current
ID
±8 A
Pulsed drain current
ID(puls]
±32 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
8A
Maximum Avalanche Energy
EAS
*1
193
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Ta=25°C
Tc=25°C
2.16
35
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=5.53mH, Vcc=45V *2 Tch<=150°C *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C
*4 VDS<= 450V
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=450V VGS=0V
VDS=360V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=4A VGS=10V
ID=4A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=4A
VGS=10V
RGS=10
VCC=225V
ID=8A
VGS=10V
L=5.53mH Tch=25°C
IF=8A VGS=0V Tch=25°C
IF=8A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
450
3.0
4
8
Typ. Max. Units
V
5.0 V
25 µA
250
10 100
nA
0.50 0.65
8S
800 1200
pF
120 150
4.5 7
15 23
ns
12 18
25 38
7 11
22 33 nC
9.5 14.5
6.5 10
A
1.00 1.50 V
0.7 µs
3.5 µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max.
3.57
58.0
Units
°C/W
°C/W
1

1 Page





K3515-01MR pdf, ピン配列
2SK3515-01MR
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=4A,VGS=10V
2.0
1.5
1.0
max.
typ.
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0 max.
4.5
4.0
3.5
3.0 min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125
Tch [°C]
150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=8A, Tch=25°C
24
22
20
Vcc= 90V
18
225V
16 360V
14
12
10
8
6
4
2
0
0 10 20 30 40 50 60
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10n
Ciss
1n
100p
Coss
10p
1p
10-1
Crss
100 101 102
VDS [V]
103
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10
102
tr
10
td(off)
td(on)
101
tf
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
100
100
ID [A]
101
3


3Pages



合計 : 4 ページ
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[ K3515-01MR データシート.PDF ]

データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。

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部品番号部品説明メーカ
K3515-01MR

MOSFET ( Transistor ) - 2SK3515-01MR

Fuji Electric
Fuji Electric

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