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STGW20V60DF の電気的特性と機能

STGW20V60DFのメーカーはSTMicroelectronicsです、この部品の機能は「600V 20A very high speed trench gate field-stop IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号
STGW20V60DF
部品説明
600V 20A very high speed trench gate field-stop IGBT
メーカ
STMicroelectronics
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STMicroelectronics ロゴ 




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STGW20V60DF Datasheet, STGW20V60DF PDF,ピン配置, 機能
STGB20V60DF, STGP20V60DF,
STGW20V60DF, STGWT20V60DF
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet - production data
TAB
TAB
3
2
1
TO-220
3
1
D²PAK
TAB
3
2
1
TO-247
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Features
Maximum junction temperature: TJ = 175 °C
Very high speed switching series
Tail-less switching off
Low saturation voltage: VCE(sat) = 1.8 V (typ.)
@ IC = 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
Lead free package
Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
Table 1. Device summary
Marking
Package
Packaging
STGB20V60DF
STGP20V60DF
STGW20V60DF
STGWT20V60DF
GB20V60DF
GP20V60DF
GW20V60DF
GWT20V60DF
D²PAK
TO-220
TO-247
TO-3P
Tape and reel
Tube
Tube
Tube
June 2013
This is information on a product in full production.
DocID024360 Rev 3
1/23
www.st.com
23
http://www.Datasheet4U.com

1 Page





STGW20V60DF pdf, ピン配列
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VCES Collector-emitter voltage (VGE = 0)
600
IC Continuous collector current at TC = 25 °C
40
IC
(1)
ICP
Continuous collector current at TC = 100 °C
Pulsed collector current
20
80
VGE Gate-emitter voltage
±20
IF Continuous forward current at TC = 25 °C
40
IF Continuous forward current at TC = 100 °C
20
IFP(1) Pulsed forward current
80
PTOT Total dissipation at TC = 25 °C
167
TSTG Storage temperature range
- 55 to 150
TJ Operating junction temperature
- 55 to 175
1. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Symbol
Table 3. Thermal data
Parameter
RthJC
RthJC
RthJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
0.9
2.08
50
Unit
V
A
A
A
V
A
A
A
W
°C
°C
Unit
°C/W
°C/W
°C/W
DocID024360 Rev 3
3/23
http://www.Datasheet4U.com


3Pages


STGW20V60DF 電子部品, 半導体
Electrical characteristics
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
2.1 Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
Figure 3. Collector current vs. case temperature
Ptot (W)
160
140
120
100
80
60
40
20
0
0
AM17175v1
25 50 75 100 125 150 175 TC (°C)
IC (A)
40
35
30
25
20
15
10
5
0
0
AM17174v1
25 50 75 100 125 150 175 TC(°C)
Figure 4. Output characteristics (TJ = 25 °C)
Ic (A)
70
15 V
11 V
AM17171v1
60
50
40
13 V
30
9V
20
10
VGE =7 V
0
0 1 2 3 4 VCE (V)
Figure 5. Output characteristics (TJ = 175 °C)
Ic (A)
AM17172v1
70
15 V
60 11 V
50
40
13 V
9V
30
20
10
VGE =7 V
0
0 1 2 3 4 VCE (V)
Figure 6. VCE(SAT) vs. junction temperature
VCE(sat)
(V)
2.8
2.6
VGE = 15V
IC 40A
AM17176v1
2.4
IC = 20A
2.2
2.0
1.8
1.6 IC= 10A
1.4
1.2
-50 -25 0 25 50 75 100 125 150 175 TJ(ºC)
Figure 7. VCE(SAT) vs. collector current
VCE (V)
4.0
3.6
VGE = 15V
TJ = 175°C
AM17177v1
3.2 TJ= 25°C
2.8
2.4
2.0
1.6 TJ= - 40°C
1.2
0.8
0 10 20 30 40 50 60 70 80 IC (A)
6/23 DocID024360 Rev 3
http://www.Datasheet4U.com

6 Page

合計 : 23 ページ
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部品番号部品説明メーカ
STGW20V60DF

600V 20A very high speed trench gate field-stop IGBT

STMicroelectronics
STMicroelectronics

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