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STW26NM60N の電気的特性と機能

STW26NM60NのメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
STW26NM60N
部品説明
N-channel Power MOSFET
メーカ
STMicroelectronics
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STMicroelectronics ロゴ 




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STW26NM60N Datasheet, STW26NM60N PDF,ピン配置, 機能
STW26NM60N
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFETs
in a TO-247 package
Datasheet - production data
Features
3
2
1
TO-247
Order code
STW26NM60N
VDS
600 V
RDS(on) max
0.165 Ω
ID
20 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Figure 1. Internal schematic diagram
' 
* 
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
6 
6&
Order code
STW26NM60N
Table 1. Device summary
Marking
Packages
26NM60N
TO-247
Packaging
Tube
September 2013
This is information on a product in full production.
DocID025246 Rev 1
1/13
www.st.com

1 Page





STW26NM60N pdf, ピン配列
STW26NM60N
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
(1)
IDM Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
(2)
dv/dt Peak diode recovery voltage slope
600
± 30
20
12.6
80
140
1.12
15
Tstg Storage temperature
–55 to 150
Tj Max. operating junction temperature
150
1. Pulse width limited by safe operating area.
2. ISD 20 A, di/dt 400 A/μs, VDSpeak V(BR)DSS, VDD = 80% V(BR)DSS
Symbol
Table 3. Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Value
0.89
50
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Avalanche current, repetitive or not-
IAS repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy
EAS
(starting TJ=25 °C, ID=IAS, VDD=50 V)
6
610
Unit
V
V
A
A
A
W
W/°C
V/ns
°C
°C
Unit
°C/W
°C/W
Unit
A
mJ
DocID025246 Rev 1
3/13
13


3Pages


STW26NM60N 電子部品, 半導体
Electrical characteristics
STW26NM60N
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
ID AM03316v1
(A)
Figure 3. Thermal impedance
10
10µs
100µs
1
1ms
0.1
0.01
0.1
1
Tj=150°C
Tc=25°C
Sinlge
pulse
10ms
10 100 VDS(V)
Figure 4. Output characteristics
Figure 5. Transfer characteristics
Figure 6. Transconductance
GFS
(S)
TJ=-50°C
AM03318v1
8.5
TJ=25°C
6.5
TJ=150°C
4.5
2.5
0.5
0 5 10 15 20 ID(A)
Figure 7. Static drain-source on-resistance
RDS(on)
(Ω)
0.16
VGS=10V
AM03317v1
0.15
0.14
0.13
0.12
0.11
0.1
0
5 10 15 20 ID(A)
6/13 DocID025246 Rev 1

6 Page

合計 : 13 ページ
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[ STW26NM60N データシート.PDF ]

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