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IRF6662TRPBF の電気的特性と機能

IRF6662TRPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号
IRF6662TRPBF
部品説明
Power MOSFET ( Transistor )
メーカ
International Rectifier
ロゴ

International Rectifier ロゴ 




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IRF6662TRPBF Datasheet, IRF6662TRPBF PDF,ピン配置, 機能
PD - 97243A
IRF6662PbF
IRF6662TRPbF
DirectFETPower MOSFET
RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
VDSS
Typical values (unless otherwise specified)
VGS
RDS(on)
100V max ±20V max
17.5m@ 10V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
22nC 6.8nC 1.2nC 50nC 11nC 3.9V
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
DG
S
D
S
Compatible with existing Surface Mount Techniques
MZ
DirectFETISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MZ
Description
The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6662PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Max.
100
±20
8.3
6.6
47
66
39
4.9
Units
V
A
mJ
A
100
ID = 4.9A
80
60
40 TJ = 125°C
20
0 TJ = 25°C
4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
12.0
10.0
8.0
6.0
ID= 4.9A
VDS= 80V
VDS= 50V
VDS= 20V
4.0
2.0
0.0
0
5 10 15 20 25
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs.
Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 3.2mH, RG = 25, IAS = 4.9A.
1
08/25/06
Free Datasheet http://www.Datasheet4U.com

1 Page





IRF6662TRPBF pdf, ピン配列
IRF6662PbF
Absolute Maximum Ratings
Parameter
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Max.
2.8
1.8
89
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
W
°C
Units
°C/W
100
D = 0.50
10
1
0.1
0.01
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R 1R 1
CiC= iτiRi/iRi
R 2R 2
τ2 τ2
R 3R 3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
R 4R4
τAτA
Ri (°C/W)
1.2801
8.7256
τi (sec)
0.000322
0.164798
τ4 τ4 21.7500 2.2576
13.2511 69
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Rθ is measured at TJ of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
www.irf.com
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
Free Datasheet http://www.Datasheet4U.com


3Pages


IRF6662TRPBF 電子部品, 半導体
IRF6662PbF
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 15b. Gate Charge Waveform
15V
VDS
L
RG
2V0GVS
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
VGS
RG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
+
-
VDD
Fig 17a. Switching Time Test Circuit
6
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
www.irf.com
Free Datasheet http://www.Datasheet4U.com

6 Page

合計 : 10 ページ
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部品番号部品説明メーカ
IRF6662TRPbF

Power MOSFET ( Transistor )

IRF
IRF
IRF6662TRPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier

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