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FTP11N08 の電気的特性と機能

FTP11N08のメーカーはIPSです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
FTP11N08
部品説明
N-Channel MOSFET
メーカ
IPS
ロゴ

IPS ロゴ 




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FTP11N08 Datasheet, FTP11N08 PDF,ピン配置, 機能
FTP11N08
N-Channel MOSFET
Applications:
• Automotive
• DC Motor Control
• Class D Amplifier
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP11N08
PACKAGE
TO-220
BRAND
FTP11N08
Pb Lead Free Package and Finish
VDSS
75V
RDS(ON) (Max.)
11 m
ID
100A
D
G
DS
TO-220
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=11 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
FTP06N65
75
100*
Figure 3
Figure 6
230
1.54
± 20
600
Figure 8
3.0
300
260
-55 to 175
Units
V
A
W
W/ oC
V
mJ
V/ ns
oC
*Drain Current limited by Maximum Package Current Rating, 75 Amps
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
©2007 InPower Semiconductor Co., Ltd.
Min. Typ. Max.
-- -- 0.65
-- -- 62
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175 oC.
1 cubic foot chamber, free air.
FTP11N08 REV. B June 2007
Free Datasheet http://www.Datasheet4U.com

1 Page





FTP11N08 pdf, ピン配列
Source-Drain Diode Characteristics Tc=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current (Body Diode)
--
-- 120
A
ISM
Maximum Pulsed Current (Body Diode)
-- -- 480
A
VSD Diode Forward Voltage
-- -- 1.5
V
trr Reverse Recovery Time
-- 130 195
ns
Qrr Reverse Recovery Charge
-- 340 510
nC
Test Conditions
Integral pn-diode
in MOSFET
IS=75A, VGS=0V
VGS=0 V
IF=75A, di/dt=100 A/µs
Notes:
*1. TJ = +25 oC to +175oC.
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD= 75A di/dt < 100 A/µs, VDD < BVDSS, TJ=+175oC.
*4. Pulse width < 380µs; duty cycle < 2%.
©2007 InPower Semiconductor Co., Ltd.
FTP11N08 REV. B June 2007
Page 3 of 11
Free Datasheet http://www.Datasheet4U.com


3Pages


FTP11N08 電子部品, 半導体
Figure 11.
1.15
Typical Breakdown Voltage vs
Junction Temperature
1.10
1.05
1.00
0.95
0.90
VGS = 0V
ID = 250 µA
-75 -50 -25 0.0 25 50 75 100 125 150 175
TJ, Junction Temperature (oC)
Figure 13. Maximum Forward Bias Safe
Operating Area
1000
10µs
100.0
100µ
10.0
OPERATION IN THIS AREA
1.0 MAY BE LIMITED BY RDS(ON)
TJ = MAX RATED, TC = 25 oC
Single Pulse
0.1
1 10
1ms
1D0Cms
100
VDS, Drain-to-Source Voltage (V)
Figure 15. Typical Gate Charge vs Gate-to-
Source Voltage
12
10
VDS = 19V
VDS = 37V
VDS = 56V
8
6
4
2
0
0
ID = 75A
10 20 30 40 50 60 70 80 90 100
QG , Total Gate Charge (nC)
©2007 InPower Semiconductor Co., Ltd.
Figure 12. Typical Threshold Voltage vs
Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
VGS = VDS
ID = 250 µA
-75 -50 -25 0.0 25 50 75 100 125 150 175
TJ, Junction Temperature (oC)
Figure 14.
10000
Typical Capacitance vs
Drain-to-Source Voltage
Ciss
1000
Coss
100
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd
Coss Cds + Cgd
Crss = Cgd
10
0.1 1
Crss
10
VDS, Drain Voltage (V)
100
Figure 16. Typical Body Diode Transfer
Characteristics
150
125
100 175 oC
75
25 oC
50
25
0
0.2
VGS = 0V
0.4 0.6 0.8 1.0
VSD, Source-to-Drain Voltage (V)
1.2
FTP11N08 REV. B June 2007
Page 6 of 11
Free Datasheet http://www.Datasheet4U.com

6 Page

合計 : 11 ページ
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[ FTP11N08 データシート.PDF ]

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部品番号部品説明メーカ
FTP11N08

N-Channel MOSFET

IPS
IPS
FTP11N08A

N-Channel Enhancement

IPS
IPS
FTP11N08N

N-Channel Enhancement

IPS
IPS

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