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STE38NB50F の電気的特性と機能

STE38NB50FのメーカーはST Microelectronicsです、この部品の機能は「N - CHANNEL PowerMESH MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
STE38NB50F
部品説明
N - CHANNEL PowerMESH MOSFET
メーカ
ST Microelectronics
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ST Microelectronics ロゴ 




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STE38NB50F Datasheet, STE38NB50F PDF,ピン配置, 機能
® STE38NB50F
N - CHANNEL 500V - 0.11 - 38A - ISOTOP
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
STE38NB50F
500 V < 0.14 38 A
s TYPICAL RDS(on) = 0.11
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
VGS
ID
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Ts tg Storage T emperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
December 1999
Value
Un it
500 V
500 V
± 30
V
38 A
24 A
152 A
400 W
3.2 W /o C
4 .5
-65 to 150
150
( 1) ISD 38 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/8

1 Page





STE38NB50F pdf, ピン配列
STE38NB50F
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 250 V
ID = 19 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 400 V ID = 38 A VGS = 10 V
Min.
Typ.
45
35
140
38
61
Max.
196
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 400 V
ID = 38 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
28
30
60
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
ISD
ISDM ()
VSD ()
trr
Qrr
I R RM
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 38 A VGS = 0
ISD = 38 A
VDD = 100 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, figure 5)
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
38
152
Unit
A
A
715
11.8
33
1.6
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8


3Pages


STE38NB50F 電子部品, 半導体
STE38NB50F
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8

6 Page

合計 : 8 ページ
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[ STE38NB50F データシート.PDF ]

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部品番号部品説明メーカ
STE38NB50

N - CHANNEL PowerMESH MOSFET

ST Microelectronics
ST Microelectronics
STE38NB50F

N - CHANNEL PowerMESH MOSFET

ST Microelectronics
ST Microelectronics

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