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STS2DPF20V の電気的特性と機能

STS2DPF20VのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
STS2DPF20V
部品説明
N-CHANNEL POWER MOSFET
メーカ
ST Microelectronics
ロゴ

ST Microelectronics ロゴ 




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STS2DPF20V Datasheet, STS2DPF20V PDF,ピン配置, 機能
STS2DPF20V
DUAL P-CHANNEL 20V - 0.14- 2A SO-8
2.7V-DRIVE STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STS2DPF20V
20 V
<0.20(@4.5V)
<0.25(@2.7V)
2A
s TYPICAL RDS(on) = 0.14(@4.5V)
s TYPICAL RDS(on) = 0.2(@2.7V)
s ULTRA LOW THRESHOLD GATE DRIVE (2.7V)
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
SO-8
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable
manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGMENT IN CELLULAR PHONES
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
20 V
VDGR
Drain-gate Voltage (RGS = 20 k)
20 V
VGS Gate- source Voltage
± 12 V
ID Drain Current (continuos) at TC = 25°C Single Operation
Drain Current (continuos) at TC = 100°C Single Operation
2
1.26
A
A
IDM (q) Drain Current (pulsed)
8A
PTOT
Total Dissipation at TC = 25°C Dual Operation
Total Dissipation at TC = 25°C Single Operation
1.6 W
2W
(q)Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed
August 2001
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1 Page





STS2DPF20V pdf, ピン配列
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 10 V, ID = 1.5A
RG = 4.7VGS = 4.5V
(see test circuit, Figure 1)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 10V, ID = 2 A,
VGS = 4.5 V
(see test circuit, Figure 2)
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 10 V, ID = 1 A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 1)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 2 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 2 A, di/dt = 100A/µs,
VDD = 10 V, Tj = 150°C
(see test circuit, Figure 3)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STS2DPF20V
Min.
Typ.
38
30
3.8
0.34
0.8
Max.
4.8
Unit
ns
ns
nC
nC
nC
Min.
Typ.
45
11
Max.
Unit
ns
ns
Min.
Typ.
15
7.5
1
Max.
2
8
1.2
Unit
A
A
V
ns
nC
A
3/6


3Pages


STS2DPF20V 電子部品, 半導体
STS2DPF20V
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
6/6

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部品番号部品説明メーカ
STS2DPF20V

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics

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