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STS2DNE60 の電気的特性と機能

STS2DNE60のメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
STS2DNE60
部品説明
N-CHANNEL POWER MOSFET
メーカ
ST Microelectronics
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ST Microelectronics ロゴ 




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STS2DNE60 Datasheet, STS2DNE60 PDF,ピン配置, 機能
® STS2DNE60
N - CHANNEL 60V - 0.180- 2A SO-8
STripFETPOWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS2DNE60
60 V < 0.23
2A
s TYPICAL RDS(on) = 0.18
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
PRELIMINARY DATA
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
SO-8
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Single Operation
Drain Current (continuous) at Tc = 100 oC
Single Operation
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC Dual Operation
Total Dissipation at Tc = 25 oC Sinlge Operation
October 1999
Value
60
60
± 20
2
1.3
8
2
1.6
Unit
V
V
V
A
A
A
W
W
1/5

1 Page





STS2DNE60 pdf, ピン配列
STS2DNE60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 30 V
ID = 1 A
RG = 4.7
VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 24 V ID = 2 A VGS = 4.5 V
Min.
Typ.
9
10
Max.
Unit
ns
ns
12 16 nC
5.1 nC
2.7 nC
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 30 V
ID = 1 A
RG = 4.7
VGS = 10 V
(Resistive Load, see fig. 3)
Vclamp = 48 V
ID = 2 A
RG = 4.7
VGS = 10 V
(Inductive Load, see fig. 5)
Min.
Typ.
25
5
4.5
5
12
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
ISDM()
VSD ()
trr
Qrr
IRRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 2 A VGS = 0
ISD = 2 A
VDD = 25 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
2
8
Unit
A
A
1.2 V
40 ns
50 nC
2.5 A
3/5


3Pages



合計 : 5 ページ
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部品番号部品説明メーカ
STS2DNE60

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics

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