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STN4NE03L の電気的特性と機能

STN4NE03LのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
STN4NE03L
部品説明
N-CHANNEL POWER MOSFET
メーカ
ST Microelectronics
ロゴ

ST Microelectronics ロゴ 




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STN4NE03L Datasheet, STN4NE03L PDF,ピン配置, 機能
® STN4NE03L
N - CHANNEL 30V - 0.037- 4A - SOT-223
STripFETPOWER MOSFET
TYPE
ST N4NE03L
VDSS
30 V
RDS(on)
< 0.05
ID
4A
s TYPICAL RDS(on) = 0.037
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ” Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
s POWER MANAGEMENT IN
BATTERY-OPERATED AND PORTABLE
EQUIPMENT
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS
ID(*)
ID(*)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg St orage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(*) Limited by package
August 1998
Value
Uni t
30 V
30 V
± 15
V
4A
2.5 A
16 A
2.5
0.02
W
W/oC
6 V/ ns
-65 to 150
oC
150 oC
(1)ISD 10A, di/dt 200A/µs, VDD V(BR)DSS, Tj TjMAX
1/8

1 Page





STN4NE03L pdf, ピン配列
STN4NE03L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
P a ra m et er
Turn-on Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 15 V
ID = 10 A
RG = 4.7
VGS = 5 V
(see test circuit, figure 3)
VDD = 24 V ID = 20 A VGS = 5 V
Min.
Typ .
15
70
Max.
20
100
22 30
7
7
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 24 V ID = 20 A
RG = 4.7 VGS = 5 V
(see test circuit, figure 5)
Min.
Typ .
12
33
55
Max.
17
46
77
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 4 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
ISD = 20 A di/dt = 100 A/µs
VDD = 15 V Tj = 150 oC
(see test circuit, figure 5)
Charge
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ .
Max.
4
16
Unit
A
A
1.5 V
40 ns
45 µC
2.2 A
Safe Operating Area
Thermal Impedance
3/8
®


3Pages


STN4NE03L 電子部品, 半導体
STN4NE03L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
®

6 Page

合計 : 8 ページ
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[ STN4NE03L データシート.PDF ]

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部品番号部品説明メーカ
STN4NE03

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics
STN4NE03L

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics

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