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STN4NF03L の電気的特性と機能

STN4NF03LのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
STN4NF03L
部品説明
N-CHANNEL POWER MOSFET
メーカ
ST Microelectronics
ロゴ

ST Microelectronics ロゴ 




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STN4NF03L Datasheet, STN4NF03L PDF,ピン配置, 機能
STN4NF03L
N-CHANNEL 30V - 0.039- 6.5A SOT-223
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STN4NF03L
30V <0.05
s TYPICAL RDS(on) = 0.039
s LOW THRESHOLD DRIVE
ID
6.5A
DESCRIPTION
This Power Mosfet is the latest development of STMi-
croelectronics unique “Single Feature Size™strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(q) Pulse width limited by safe operating area
Value
30
30
±16
6.5
4.5
26
3.3
0.026
200
–55 to 175
(1) Starting Tj=25°C, ID=6.5A, VDD=15V
December 2002
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
1/8

1 Page





STN4NF03L pdf, ピン配列
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V, ID = 2 A
RG = 4.7VGS = 4.5 V
(see test circuit, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 24 V, ID = 4 A,
VGS = 10 V
SWITCHING OFF
Symbol
Parameter
Test Conditions
td(off)
Turn-off-Delay Time
VDD = 15 V, ID = 2 A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 3)
tf Fall Time
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 6.5 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 6.5 A, di/dt = 100 A/µs,
VDD = 15 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STN4NF03L
Min.
Typ.
11
100
6.5
3.6
2
Max.
9
Unit
ns
ns
nC
nC
nC
Min.
Typ.
25
Max.
Unit
ns
22 ns
Min.
Typ.
35
25
1.4
Max.
6.5
26
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedence Junction-PCB
3/8


3Pages


STN4NF03L 電子部品, 半導体
STN4NF03L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8

6 Page

合計 : 8 ページ
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[ STN4NF03L データシート.PDF ]

データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。

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部品番号部品説明メーカ
STN4NF03L

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics

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