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TLP666G の電気的特性と機能

TLP666GのメーカーはToshiba Semiconductorです、この部品の機能は「TOSHIBA Photocoupler GaAs Ired & Photo Triac」です。


製品の詳細 ( Datasheet PDF )

部品番号
TLP666G
部品説明
TOSHIBA Photocoupler GaAs Ired & Photo Triac
メーカ
Toshiba Semiconductor
ロゴ

Toshiba Semiconductor ロゴ 




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TLP666G Datasheet, TLP666G PDF,ピン配置, 機能
TOSHIBA Photo Coupler GaAs Ired & PhotoTriac
TLP666G
Office machine
Household use equipment
Triac driver
Solid State Relay
TLP666G
Unit in mm
The TOSHIBA TLP666G consists of a zero voltage crossing turnon
phototriac optically coupled to a gallium arsenide infrared emitting
diode in a six lead plastic DIP.
· Peak offstate voltage: 400V(min.)
· Trigger LED current: 10mA(max.)
· Onstate current: 100mA(max.)
· UL recognized: UL1577, file no. E67349
· Isolation voltage: 5000Vrms(min.)
· Option(D4) type
VDE approved: DIN VDE0884/08.87,
Certificate no.68383
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 6000VPK
(Note 1) When a VDE0884 approved type is needed,
please designate the “option(D4)”
· Structural parameter
Creepage distance: 7.0mm(min.)
Clearance: 7.0mm(min.)
Insulation thickness: 0.5mm(min.)
JEDEC
EIAJ
TOSHIBA
Weight: 0.44 g
119A2
Pin Configurations (top view)
16
2
3 ZC
4
1 : Anode
2 : Cathode
3 : N.C.
4 : Terminal 1
6 : Terminal 2
1 2002-09-25

1 Page





TLP666G pdf, ピン配列
TLP666G
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Forward voltage
Reverse current
Capacitance
Peak off-state current
Peak on-state voltage
Holding current
Critical rate of rise of
off-state voltage
Critical rate of rise of
commutating voltage
VF
IR
CT
IDRM
VTM
IH
dv / dt
dv/dt(c)
IF=10mA
VR=5 V
V=0, f=1MHz
VDRM=400V
ITM=100mA
Vin=120Vrms, Ta=85°C
Vin=30Vrms, IT=15mA
1.0
(Note 3) 200
(Note 3)
1.15
30
10
1.7
0.6
500
0.2
1.3 V
10 µA
pF
100 nA
3.0 V
mA
V / µs
V / µs
(Note 3) dv / dt test circuit
VCC
+ Rin
120
-
1
2
3
Vin
6
5 RL
4
4k
5V, VCC
0V
dv / dtcdv / dt
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Inhibit voltage
Leakage in inhibited state
Capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
IFT
VIH
IIH
CS
RS
BVS
Test Condition
VT=3V
IF=rated IFT
IF=rated IFT
VT=rated VDRM
VS=0, f=1MHz
VS=500V, R.H.60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
Min. Typ. Max. Unit
5 10 mA
40
V
100 300 µA
5×1012
5000
0.8
1014
10000
10000
pF
Vrms
Vdc
3 2002-09-25


3Pages


TLP666G 電子部品, 半導体
TLP666G
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6 2002-09-25

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部品番号部品説明メーカ
TLP666G

TOSHIBA Photocoupler GaAs Ired & Photo Triac

Toshiba Semiconductor
Toshiba Semiconductor
TLP666GF

TOSHIBA Photocoupler GaAs Ired & Photo Triac

Toshiba Semiconductor
Toshiba Semiconductor
TLP666J

TOSHIBA Photocoupler GaAs Ired & Photo Triac

Toshiba Semiconductor
Toshiba Semiconductor
TLP666JF

TOSHIBA Photocoupler GaAs Ired & Photo Triac

Toshiba Semiconductor
Toshiba Semiconductor

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