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DG212B の電気的特性と機能

DG212BのメーカーはVishay Intertechnologyです、この部品の機能は「(DG211B / DG212B) Improved Quad CMOS Analog Switches」です。


製品の詳細 ( Datasheet PDF )

部品番号
DG212B
部品説明
(DG211B / DG212B) Improved Quad CMOS Analog Switches
メーカ
Vishay Intertechnology
ロゴ

Vishay Intertechnology ロゴ 




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DG212B Datasheet, DG212B PDF,ピン配置, 機能
DG211B/212B
Vishay Siliconix
Improved Quad CMOS Analog Switches
FEATURES
D "22-V Supply Voltage Rating
D TTL and CMOS Compatible Logic
D Low On-Resistance—rDS(on): 50 W
D Low Leakage—ID(on): 20 pA
D Single Supply Operation Possible
D Extended Temperature Range
D Fast Switching—tON: 120 ns
D Low Charge Injection—Q: 1 pC
BENEFITS
D Wide Analog Signal Range
D Simple Logic Interface
D Higher Accuracy
D Minimum Transients
D Reduced Power Consumption
D Superior to DG211/212
D Space Savings (TSSOP)
APPLICATIONS
D Industrial Instrumentation
D Test Equipment
D Communications Systems
D Disk Drives
D Computer Peripherals
D Portable Instruments
D Sample-and-Hold Circuits
DESCRIPTION
The DG211B/212B analog switches are highly improved
versions of the industry-standard DG211/212. These devices
are fabricated in Vishay Siliconix’ proprietary silicon gate
CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc. An
improved charge injection compensation design minimizes
switching transients. The DG211B and DG212B can handle
up to "22 V, and have an improved continuous current rating
of 30 mA. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
The DG211B is a normally closed switch and the DG212B is
a normally open switch. (See Truth Table.)
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG211B
Dual-In-Line, SOIC and TSSOP
IN1
D1
S1
V–
GND
S4
D4
IN4
1
2
3
4
5
6
7
8
Top View
16 IN2
15 D2
14 S2
13 V+
12 VL
11 S3
10 D3
9 IN3
Document Number: 70040
S-00788—Rev. H, 24-Apr-00
TRUTH TABLE
Logic
DG211B
DG212B
0 ON OFF
1
OFF
ON
Logic “0” v 0.8 V
Logic “1” w 2.4 V
www.vishay.com S FaxBack 408-970-5600
4-1

1 Page





DG212B pdf, ピン配列
DG211B/212B
Vishay Siliconix
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Ranged
Drain-Source On-Resistance
rDS(on) Match
Source Off Leakage Current
Drain Off Leakage Current
Drain On Leakage Current
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel On Capacitance
Off Isolation
Channel-to-Channel Crosstalk
Power Supply
Positive Supply Current
Negative Supply Current
Logic Supply Current
Power Supply Range for
Continuous Operation
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 2.4 V, 0.8 Ve
Tempa
D Suffix
–40 to 85_C
Minb Typc Maxb
Unit
VANALOG
rDS(on)
DrDS(on)
IS(off)
ID(off)
ID(on)
VD = "10 V, IS = 1 mA
VS = "14 V, VD = #14 V
VD = "14 V, VS = #14 V
VS = VD = "14 V
Full –15
15 V
Room
Full
Room
45 85
100 W
2
Room
Full
–0.5
–5
"0.01
0.5
5
Room
Full
–0.5
–5
"0.01
0.5
5
nA
Room
Full
–0.5
–10
"0.02
0.5
10
VINH
VINL
IINH or IINL
CIN
tON
tOFF
Q
CS(off)
CD(off)
CD(on)
OIRR
XTALK
VINH or VINL
VS =10 V
See Figure 2
CL = 1000 pF, Vg= 0 V, Rg = 0 W
VS = 0 V, f = 1 MHz
VD = VS = 0 V, f = 1 MHz
CL = 15 pF, RL = 50 W
VS = 1 VRMS, f = 100 kHz
I+
VIN = 0 or 5 V
I–
IL
VOP
Full 2.4
Full
V
0.8
Full –1
1 mA
Room 5 pF
Room
Room
Room
Room
Room
Room
Room
Room
300
ns
200
1 pC
5
5 pF
16
90
dB
95
Room
Full
Room
Full
Room
Full
Full
–10
–50
"4.5
10
50
10
50
"22
mA
V
Document Number: 70040
S-00788—Rev. H, 24-Apr-00
www.vishay.com S FaxBack 408-970-5600
4-3


3Pages


DG212B 電子部品, 半導体
DG211B/212B
Vishay Siliconix
TEST CIRCUITS
VS = +2 V
3V
+15 V
V+
SD
IN
GND
V–
RL
1 kW
VO
CL
35 pF
–15 V
VO = VS
RL
RL + rDS(on)
Logic
Input
3V
0V
Switch
Output
VO
FIGURE 2. Switching Time
50%
90%
tr <20 ns
tf <20 ns
tOFF
tON
+15 V
C
VS
Rg = 50 W
0V, 2.4 V
V+
SD
IN
GND
V– C
Off Isolation = 20 log
VS
VO
–15 V
FIGURE 3. Off Isolation
VO
RL
C +15 V
V+
VS S1 D1
Rg = 50 W
0V, 2.4 V
IN1
S2
NC
D2
0V, 2.4 V
IN2
C = RF bypass
XTALK Isolation = 20 log
VS
VO
GND
V– C
–15 V
50 W
VO
RL
FIGURE 4. Channel-to-Channel Crosstalk
Rg
Vg
3V
+15 V
V+
SD
IN
GND
V–
–15 V
www.vishay.com S FaxBack 408-970-5600
4-6
VO
CL
1000 pF
DVO
VO
INX ON
OFF
ON
DVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x DVO
FIGURE 5. Charge Injection
Document Number: 70040
S-00788—Rev. H, 24-Apr-00

6 Page

合計 : 8 ページ
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[ DG212B データシート.PDF ]

データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。

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