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Datasheet PHMB600E6 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1phmb600e6IGBT, Insulated Gate Bipolar Transistor

IGBT Module-Single □ 回 路 図 : CIRCUIT (E) 4 (G) 3 (E) 2 (C) 1 80 600A,600V □ 外 形 寸 法 図 : OUTLINE DRAWING 110 93 ± 0.25 4 4 - Ø6.5 2 -M8 4 - Ø6.5 2 -M6 1 2 20 20 62 ±0.25
Nihon Inter Electronics
Nihon Inter Electronics
igbt
2phmb600e6cIGBT, Insulated Gate Bipolar Transistor

IGBT Module-Single □ 回 路 図 : CIRCUIT (E) 4 (G) 3 (E) 2 (C) 1 80 600A,600V □ 外 形 寸 法 図 : OUTLINE DRAWING 110 93 ± 0.25 4 4 - Ø6.5 2 -M8 4 - Ø6.5 2 -M6 1 2 20 20 62 ±0.25
Nihon Inter Electronics
Nihon Inter Electronics
igbt


PHM Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1PHM00330w 450-470 MHZ Power RF Amplifiers

polyfet rf devices Power RF Amplifiers Power = 30 Watts 450 to 470 Mhz Vdd =12.5 Volts Bandwidth = Gain = 25 dB PHM003 50 ohms Input/Output Impedance Description The PHM003 is a high gain high power amplifier design for the Tetra frequency range. It has two stages and uses the
Polyfet RF Devices
Polyfet RF Devices
amplifier
2PHM008The PHM008 is a dual stage amplifier specifically designed for Land Mobile

polyfet rf devices Power RF Amplifiers Power = 3 Watts Bandwidth = 400 to 520 Mhz Gain = 24 dB Vdd = 7.5 Volts PHM008 50 ohms Input/Output Impedance Description The PHM008 s a dual stage amplifier specifically designed for Land Mobile UHF band portable radio applications. Ab
Polyfet RF Devices
Polyfet RF Devices
amplifier
3PHM017Power RF Amplifiers

polyfet rf devices Power RF Amplifiers Power = 10.0 Watts Bandwidth = 380 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance PHM017 Description The PHM017 is a 10 Watt FM / 2 Watt AM amplifier module covering a bandwidth of 380-512 Mhz. It has a high IP3
Polyfet RF Devices
Polyfet RF Devices
amplifier
4PHM020Power RF Amplifiers

polyfet rf devices Power RF Amplifiers Power = 5.0 Watts Bandwidth = 225 to 400 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance PHM020 Description The PHM020 is a 5 Watt FM / 1 Watt AM amplifier module covering a bandwidth of 225-400 Mhz. It has a high harmo
Polyfet RF Devices
Polyfet RF Devices
amplifier
5PHM021Power RF Amplifiers

polyfet rf devices Power RF Amplifiers Power = 10.0 Watts Bandwidth = 136 to 174 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance PHM021 Description The PHM021 is a 10 Watt FM / 2 Watt AM amplifier module covering a bandwidth of 136-174 Mhz. It has a high IP3
Polyfet RF Devices
Polyfet RF Devices
amplifier
6PHM022Power RF Amplifiers

polyfet rf devices Power RF Amplifiers Power = 10.0 Watts Bandwidth = 300 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance PHM022 Description The PHM022 is a 12 Watt FM / 4 Watt AM amplifier module covering a bandwidth of 300-512 Mhz. It has a high IP3
Polyfet RF Devices
Polyfet RF Devices
amplifier
7PHM12NQ20TTrenchMOS standard level FET

PHM12NQ20T TrenchMOS™ standard level FET Rev. 01 — 30 January 2003 Preliminary data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHM12NQ20T in SOT685-1 (QLPA
NXP Semiconductors
NXP Semiconductors
data



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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