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Datasheet ZXTN25100BFH Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | ZXTN25100BFH | 100V NPN LOW SATURATION TRANSISTOR Features
BVCEO > 100V BVCEX > 170V Forward Blocking Voltage BVECO > 6V Reverse Blocking Voltage IC = 3A high Continuous Collector Current Low Saturation Voltage, VCE(SAT) < 80mV @1A RCE(SAT) = 67mΩ for a Low Equivalent On-Resistance 1.25W Power Dissipation hFE Speci |  Diodes | transistor |
| 2 | ZXTN25100BFH | NPN medium power transistor ZXTN25100BFH 100V, SOT23, medium power transistor
Summary
BVCEX > 170V BVCEO > 100V BVECO > 6V IC(cont) = 3A VCE(sat) < 80mV @ 1A RCE(sat) = 67m⍀ PD = 1.25W Complementary part number ZXTP25100BFH
Description
Advanced process capability and package design have been used to maximize the power handl |  Zetex Semiconductors | transistor |
ZXT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | ZXT1053AK | 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ZXT1053AK
75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK
SUMMARY BVCEO = 75V : RSAT = 70m DESCRIPTION
Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management f Zetex Semiconductors transistor | | |
| 2 | ZXT1053AKTC | 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ZXT1053AK
75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK
SUMMARY BVCEO = 75V : RSAT = 70m DESCRIPTION
Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management f Zetex Semiconductors transistor | | |
| 3 | ZXT10N15DE6 | 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10N15DE6
SuperSOT™ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. Zetex Semiconductors transistor | | |
| 4 | ZXT10N20DE6 | 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10N20DE6
SuperSOT™ 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses Zetex Semiconductors transistor | | |
| 5 | ZXT10N50DE6 | 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10N50DE6
SuperSOT™ 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=50V; RSAT = 75m ; IC= 3A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. Zetex Semiconductors transistor | | |
| 6 | ZXT10P12DE6 | 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10P12DE6
SuperSOT™ 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses Zetex Semiconductors transistor | | |
| 7 | ZXT10P20DE6 | 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10P20DE6
SuperSOT™ 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=-20V; RSAT = 96m ; IC= -2.5A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state loss Zetex Semiconductors transistor | |
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