ZXMS6004SGQTA データシート PDFこの部品の機能は「60v N-channel Self Protected Enhancement Mode Mosfet」です。 |
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部品番号 |
ZXMS6004SGQTA 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET ADVANCE INFORMATION ZXMS6004SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Continuous Drain Source Voltage VDS= 60V On-State Resistance 500mΩ � Diodes |
文字列「 ZXMS6004 」「 6004SGQTA 」で始まる検索結果です。 |
部品説明 |
ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET ADVANCE INFORMATION ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Continuous Drain Source Voltage On-State Resistance Nominal load current (VIN = 5V) Clamping Energy VDS= 60V 500mΩ 1.3A 490mJ Description The Z Diodes |
ZXMS6004DGQTA 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET ADVANCE INFORMATION ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Continuous Drain Source Voltage On-State Resistance Nominal load current (VIN = 5V) Clamping Energy VDS= 60V 500mΩ 1.3A 490mJ Description The Z Diodes |
ZXMS6004DN8 N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET ADVANCE INFORMATION ZXMS6004DN8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary Continuos Drain-Source Voltage: 60V On-State Resistance: 500mΩ Nominal Load Current (VIN = 5V): 1.3A Clamping Energy: 120mJ Description The ZXMS60 Diodes |
ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET A Product Line of Diodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance Nominal load current (VIN = 5V) Clamping Energy 500 mΩ 1.2 A 210 mJ DESCRI Diodes Incorporated |
ZXMS6004DT8Q N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET ADVANCE INFORMATION ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary Continuous Drain Source Voltage VDS = 60V On-State Resistance 500mΩ Nominal Load Current (VIN = 5V) 1.2A Clamping Energy 210mJ Descriptio Diodes |
ZXMS6004FF 60V N-channel self protected enhancement mode Intellifet MOSFET A Product Line of Diodes Incorporated ZXMS6004FF 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage On-state resistance Nominal load current (VIN = 5V) Clamping energy 60 V 500 mΩ 1.3 A 90mJ Description Diodes Incorporated |
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