ZXMN3A01E6 データシート PDFこの部品の機能は「30v N-channel Enhancement Mode Mosfet」です。 |
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部品番号 |
ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.12 ID=3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the Zetex Semiconductors |
文字列「 ZXMN3A01E6 」「 3A01E6 」で始まる検索結果です。 |
部品説明 |
1N3016 Diode Zener Single 6.8V 20% 1W 2-Pin DO-13 New Jersey Semiconductor |
1N3016A Diode Zener Single 6.8V 10% 1W 2-Pin DO-13 New Jersey Semiconductor |
1N3016B 1 WATT ZENER DIODES • 1N3016B-1 thru 1N3045B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/115 • 1 WATT ZENER DIODES • METALLURGICALLY BONDED 1N3016B thru1N3045B and 1N3016B-1 thru 1N3045B-1 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175 Compensated Deuices Incorporated |
1N3016B 1 WATT METAL CASE ZENER DIODES 1N3016B thru 1N3051B 1 WATT METAL CASE ZENER DIODES SCOTTSDALE DIVISION DESCRIPTION This well established zener diode series for the 1N3016 thru 1N3051 JEDEC registration in the metal case DO-13 package provides a glass hermetic seal for 6.8 to 200 volts. It is also well suited Microsemi Corporation |
1N3016B Diode Zener Single 6.8V 5% 1W 2-Pin DO-13 New Jersey Semiconductor |
1N3016B DIODE Technical Data DIODE maximum ratings Voltage, Reverse (VZ) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IZM) Current, Surge (IFM) at tp = Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-A) Max. DSI |
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