XR19L200 データシート PDFこの部品の機能は「Single Channel Integrated Uart And Rs-232 Transceiver」です。 |
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部品番号 |
XR19L200 SINGLE CHANNEL INTEGRATED UART AND RS-232 TRANSCEIVER www.Datasheet.jp APRIL 2006 PRELIMINARY XR19L200 REV. P1.0.2 SINGLE CHANNEL INTEGRATED UART AND RS-232 TRANSCEIVER GENERAL DESCRIPTION The XR19L200 (L200) is a highly integrated device that com Exar Corporation |
文字列「 XR19L200 」「 19L200 」で始まる検索結果です。 |
部品説明 |
MRF6S19200HR3 RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multica Freescale Semiconductor |
MRF6S19200HSR3 RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multica Freescale Semiconductor |
PTFA192001E Thermally-Enhanced High Power RF LDMOS FET PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz www.DataSheet4U.net Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA a Infineon Technologies |
PTFA192001F Thermally-Enhanced High Power RF LDMOS FET PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz www.DataSheet4U.net Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA a Infineon Technologies |
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