XO3285 PDF Datasheet

Model XO3285-XXX Shock Hardened TCXO Electrical Specifications Nominal Frequency (FO): 10MHz to 24MHz Frequency Stability Over Temperature, ± 1ppm, maximum Aging/year, ±1ppm, maximum Frequency Adjustment Method, external voltage, 0.5VDC to 2.5VDC Range, sufficient for 10 years aging Slope, positive Output (clipped sine) Level (user selectable @ time of pu

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High speed switching ·Good linearity of hFE ·High VCBO 2SC3285 APPLICATIONS ·For high speed switching applications PINNING(see Fig.2) PIN 1 2

Ordering number:ENN6358 N-Channel Silicon MOSFET 2SK3285 DC/DC Converter Applications Features · Low ON resistance. · 4V drive. Package Dimensions unit:mm 2093A [2SK3285] 0.9 10.2 4.5 1.3 11.5 1.6 20.9 1.2 9.4 0.8 11.0 8.8 0.4 1 2 3 2.55 2.55 1 : Gate 2 : Drain 3

Freescale Semiconductor Advance Information Document Number: MC33285 Rev. 5.0, 2/2007 Dual High-Side TMOS Driver A single input controls the 33285 in driving two external high-side NChannel TMOS power FETs controlling incandescent or inductive loads. Pulse

August 2004 rev 2.0 DDR 24-Bit to 48-Bit Registered Buffer ASM4SSTVF32852 Features   Differential clock signals. Supports SSTL_2 class II specifications on inputs and outputs. Low voltage operation.  VDD = 2.3V to 2.7V. To ensure that outputs are at a defined logic st