XN01110 PDF Datasheet

Composite Transistors XN1110 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0

MAAM-011100 Broadband Variable Gain Amplifier (VGA) 400 MHz - 20 GHz Features  12 dB Gain  50 Ω Input/Output Match over Gain Range  30 dB Gain Control with 0 to -2 V Control  +18 dBm Output Power  +5 V, -0.5 V DC, 70 mA  Lead-Free 1.5 x 1.2 m

MAAM-011101 Ultra small Broadband General Purpose Amplifier 4 - 20 GHz Rev. V1 Features  Gain: 16 dB  Flatness: ± 2 dB  50 Ω match in and out  P1dB: +18 dBm @ 14 GHz  Single DC supply, +5 V to +12 V, 45 mA  Lead-Free 1.5 x 1.2 mm 6-Lead T

MAAM-011109 Wideband Amplifier 10 MHz - 40 GHz Rev. V2 Features  13 dB Gain  50 Ω Input / Output Match  +18 dBm Output Power  +5 V DC, 190 mA  Lead-Free 5 mm 9-lead LGA Package  RoHS* Compliant and 260°C Reflow Compatible Functional Schematic VC VDET BC VD

MAAP-011106 Power Amplifier, 71 - 86 GHz Features  4 Stage Power Amplifier for E Band  20 dB Gain  15 dB input and output match  25 dBm saturated output power  30 dBm OIP3  Variable gain with adjustable bias  Integrated detector  Bare die  RoHS* compli

SPECIFICATION FOR APPROVAL REF : 20070101-A PROD. NAME PAGE: 1 ABC'S DWG NO. ABC'S ITEM NO. SH2011□□□□L□-□□□ SHIELDED SMD POWER INDUCTOR CONFIGURATION & DIMENSIONS¡G ¢¹¡O A A F I B C : 2.60 ±0.20 : 2.60 ±0.20 : 1.10 ±0.10 m/m m/m