XL28C256 データシート PDFこの部品の機能は「32k X 8 Cmos Eeprom」です。 |
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部品番号 |
XL28C256 32K x 8 CMOS EEPROM w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h t e U 4 .c m o w w w .D a t a e h S 4 t e U . m o c Exel Microelectronics |
文字列「 XL28C256 」「 28C256 」で始まる検索結果です。 |
部品説明 |
28C256 256K 32K x 8 Paged CMOS E2PROM AT28C256 Features • • • • • • • • • • • Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum 1 to 64-Byte Pag ATMEL Corporation |
28C256 5 Volt / Byte Alterable E2PROM X28C256 256K X28C256 5 Volt, Byte Alterable E2PROM 32K x 8 Bit FEATURES DESCRIPTION The X28C256 is an 32K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C256 is a 5V o Xicor |
28C256 32K-Bit Parallel E2PROM CAT28C256 32K-Bit Parallel E2PROM FEATURES s Fast Read Access Times: 120/150ns s Low Power CMOS Dissipation: s Hardware and Software Write Protection s Automatic Page Write Operation: –Active: 25 mA Max. –Standby: 150 µA Max. s Simple Write Operation: –1 to 64 Bytes in 5 Catalyst |
28C256T 256K EEPROM (32K x 8-Bit) EEPROM 28C256T 256K EEPROM (32K x 8-Bit) EEPROM VCC GND DATA INPUTS/OUTPUTS I/O0 - I/O7 OE WE CE OE, CE, and WE LOGIC DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX ADDRESS INPUTS Y DECODER X DECODER IDENTIFICATION Logic Diagram Memory FEATURES: • RAD Maxwell Technologies |
AT28C256 256K (32K x 8) Paged Parallel EEPROM Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer • Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum – 1 to 64-byte Page Write Operation • Low ATMEL Corporation |
CAT28C256 32K-Bit Parallel E2PROM CAT28C256 32K-Bit Parallel E2PROM FEATURES s Fast Read Access Times: 120/150ns s Low Power CMOS Dissipation: s Hardware and Software Write Protection s Automatic Page Write Operation: –Active: 25 mA Max. –Standby: 150 µA Max. s Simple Write Operation: –1 to 64 Bytes in 5 Catalyst Semiconductor |
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