XCV2600E-7FG240I データシート PDFこの部品の機能は「Virtex-e 1.8 V Field Programmable Gate Arrays」です。 |
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部品番号 |
XCV2600E-7FG240I Virtex-E 1.8 V Field Programmable Gate Arrays 0 R Virtex™-E 1.8 V Field Programmable Gate Arrays 0 0 DS022-1 (v2.2) November 9, 2001 Preliminary Product Specification Features • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k Xilinx |
文字列「 XCV2600E7FG240 」「 2600E 」で始まる検索結果です。 |
部品説明 |
2504026007Y0 Chip Beads 15th Edition 27 Board Components Fair-Rite Products Corp. Phone: (888) FAIR RITE / (845) 895-2055 • FAX: (888) FERRITE / (845) 895-2629 (888) 324-7748 (888) 337 -7483 PO Box J, One Commercial Row, Wallkill, NY 12589-0288 • www.fair-rite.com • E-Mai Fair-Rite Products |
2600 Bobbin Wound Surface Mount Inductors 2600 SERIES Bobbin Wound Surface Mount Inductors FEATURES s Bobbin Format s Up to 4.6A IDC s 3.3µH to 680µH s Optional Integral EMI Shield s Low DC Resistance s Surface Mounting s Compact Size s Tape and Reel Packaging DESCRIPTION The 2600 series is a range of bobbin wound sur C&DTechnologies |
2SD2600 NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications Ordering number : EN8564 2SD2600 SANYO Semiconductors DATA SHEET 2SD2600 Applications • NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Fea Sanyo Semicon Device |
3B2600 HIGH RATE LITHIUM CELL HIGH RATE LITHIUM CELL QTC85 SERIES: 3B2600 SIZE DD LITHIUM THIONYL CHLORIDE CELL Technical Overview Open Circuit Voltage (25oC) Rated Discharge Current Rated Capacity (to 2.5V, @ 20oC Maximum Continuous Current Cell Diameter Cell Length (some ter minations may be greater) Cell W Electrochem |
3VD182600YL HIGH VOLTAGE MOSFET CHIPS 3VD182600YL 3VD182600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Ø Ø Ø Ø Advanced termination scheme to provide enhanced voltage-blocking Silan Microelectronics |
5STP45N2600 Phase Control Thyristor VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 5080 A 7970 A 75000 A 0.86 V 0.07 mΩ Phase Control Thyristor 5STP 45N2800 Doc. No. 5SYA1007-03 Jan. 02 • • • • Patented free-floating silicon technology Low on-state and switching losses for traction, energy and indu ABB |
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