|
|
Datasheet W9NK90Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | W9NK90Z | STW9NK90Z
STB9NK90Z - STFPNK90Z STP9NK90Z - STW9NK90Z
N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET
General features
Type STB9NK90Z STW9NK90Z STP9NK90Z STF9NK90Z
■ ■ ■
VDSS 900V 900V 900V 900V
RDS(on) <1.3Ω <1.3Ω <1.3Ω <1.3Ω
|  STMicroelectronics | data |
W9N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | W9NA60 | STW9NA60 STW9NA60 ® STH9NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE
STW 9NA60 S TH9NA 60F I
V DSS
600 V 600 V
RDS(on)
< 0.8 Ω < 0.8 Ω
ID
9.5 A 6.4 A
s TYPICAL RDS(on) = 0.69 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100o STMicroelectronics data | | |
| 2 | W9NB80 | STW9NB80 ®
STW9NB80
N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH™ MOSFET
TYPE STW 9NB80
s s s s s s
V DSS 800 V
R DS(on) <1Ω
ID 9.3 A
TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHA STMicroelectronics data | | |
| 3 | W9NB90 | STW9NB90 ® STW9NB90
N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
S TW 9NB9 0
900 V
<1Ω
9.7 A
s TYPICAL RDS(on) = 0.85 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE STMicroelectronics data | | |
| 4 | W9NB90 | STW9NB90 ® STW9NB90
N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
S TW 9NB9 0
900 V
<1Ω
9.7 A
s TYPICAL RDS(on) = 0.85 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE STMicroelectronics data | | |
| 5 | W9NK70Z | STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET
TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z
s s s s s s s
STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z
VDSS 700 700 700 700 700 V V V V V
RDS(on) < 1.2 < 1.2 < 1.2 < 1. STMicroelectronics data | | |
| 6 | W9NK90Z | STW9NK90Z
STB9NK90Z - STFPNK90Z STP9NK90Z - STW9NK90Z
N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET
General features
Type STB9NK90Z STW9NK90Z STP9NK90Z STF9NK90Z
■ ■ ■
VDSS 900V 900V 900V 900V
RDS(on) <1.3Ω <1.3Ω <1.3Ω <1.3Ω
STMicroelectronics data | | |
| 7 | W9NK95Z | STW9NK95Z STW9NK95Z
N-channel 950 V - 1.15 Ω - 7 A - TO-247 Zener-protected SuperMESHTM Power MOSFET
Features
Type STW9NK95Z
VDSS
RDS(on) Max
ID
950 V < 1.38 Ω 7 A
Pw 160 W
■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized
Application
■ Switching applicati STMicroelectronics data | |
| Esta página es del resultado de búsqueda del W9NK90Z. Si pulsa el resultado de búsqueda de W9NK90Z se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |