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W9NB80 データシート PDF ( Data ) |
番号 | 部品番号 | 部品説明 | メーカ | |
1 | W9NB80 | STW9NB80 ® STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH™ MOSFET TYPE STW 9NB80 s s s s s s V DSS 800 V R DS(on) <1Ω ID 9.3 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY |
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W9N データシート - 検索結果 |
部品番号 | 部品説明 | メーカ | |
W9NA60 | STW9NA60 STW9NA60 ® STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW 9NA60 S TH9NA 60F I V DSS 600 V 600 V RDS(on) < 0.8 Ω < 0.8 Ω ID 9.5 A 6.4 A s TYPICAL RDS(on) = 0.69 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AV |
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W9NB90 | STW9NB90 ® STW9NB90 N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH™ MOSFET TYPE V DSS RDS(on) ID S TW 9NB9 0 900 V <1Ω 9.7 A s TYPICAL RDS(on) = 0.85 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC |
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W9NB80 | STW9NB80 ® STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH™ MOSFET TYPE STW 9NB80 s s s s s s V DSS 800 V R DS(on) <1Ω ID 9.3 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC C |
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W9NB90 | STW9NB90 ® STW9NB90 N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH™ MOSFET TYPE V DSS RDS(on) ID S TW 9NB9 0 900 V <1Ω 9.7 A s TYPICAL RDS(on) = 0.85 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC |
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W9NK95Z | STW9NK95Z STW9NK95Z N-channel 950 V - 1.15 Ω - 7 A - TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type STW9NK95Z VDSS RDS(on) Max ID 950 V < 1.38 Ω 7 A Pw 160 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized Application |
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W9NK70Z | STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z s s s s s s s STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z VDSS 700 700 700 700 700 V V V V V RDS(on) < |
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