VTP5050 データシート PDFこの部品の機能は「Vtp Process Photodiodes」です。 |
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部品番号 |
VTP5050 VTP Process Photodiodes VTP Process Photodiodes VTP5050 PACKAGE DIMENSIONS inch (mm) CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a “flat” window, dual PerkinElmer Optoelectronics |
文字列「 VTP5050 」「 5050 」で始まる検索結果です。 |
部品説明 |
0895050 Fuses Cartridge Fuses Low Profile JCASE® Fuses Rated 58V Specifications Voltage Rating: Interrupting Rating: Operating Temperature Range: Insertion Force: Extraction Force: Packaging: 58 VDC 1000A @ 58 VDC -40˚C to + 125˚C 53N Max. (12 lb.) 9N Min (2 lb.) Series Littelfuse |
2N5050 Bipolar NPN Device 2N5050 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 Seme LAB |
2N5050 (2N5050 - 2N5052) Silicon NPN Power Transistors SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High breakdown voltage ·Excellent safe operating area APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN SavantIC |
2N5050 Trans GP BJT NPN 125V 2A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor |
2SC5050 Silicon NPN Epitaxial 2SC5050 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5050 Absol Hitachi Semiconductor |
2SC5050 Silicon NPN Epitaxial To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003 Renesas |
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