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Datasheet VTE3373LA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | VTE3373LA | GaAlAs Infrared Emitting Diodes GaAlAs Infrared Emitting Diodes
Long T-1 (3 mm) Plastic Package — 880 nm
VTE3372LA, 74LA
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011"
This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. |  PerkinElmer Optoelectronics | diode |
VTE Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | VTE1013 | GaAs Infrared Emitting Diodes GaAs Infrared Emitting Diodes
TO-46 Flat Window Package — 940 nm
VTE1013
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018"
This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitabl PerkinElmer Optoelectronics diode | | |
| 2 | VTE1063 | GaAlAs Infrared Emitting Diodes GaAlAs Infrared Emitting Diodes
TO-46 Flat Window Package — 880 nm
VTE1063
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018"
This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficien PerkinElmer Optoelectronics diode | | |
| 3 | VTE1113 | GaAs Infrared Emitting Diodes GaAs Infrared Emitting Diodes
TO-46 Lensed Package — 940 nm
VTE1113
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" X .018"
This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for hig PerkinElmer Optoelectronics diode | | |
| 4 | VTE1163 | GaAlAs Infrared Emitting Diodes GaAlAs Infrared Emitting Diodes
TO-46 Lensed Package — 880 nm
VTE1163
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018"
This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED PerkinElmer Optoelectronics diode | | |
| 5 | VTE1261 | GaAlAs Infrared Emitting Diodes GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Plastic Package — 880 nm
VTE1261, 1262
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018"
This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, hi PerkinElmer Optoelectronics diode | | |
| 6 | VTE1262 | GaAlAs Infrared Emitting Diodes GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Plastic Package — 880 nm
VTE1261, 1262
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018"
This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, hi PerkinElmer Optoelectronics diode | | |
| 7 | VTE1281-1 | GaAlAs Infrared Emitting Diodes GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Plastic Package — 880 nm
VTE1281-1, -2
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 26 T-1¾ (5 mm) CHIP SIZE: .015" x .015"
This narrow beam angle 5 mm diameter plastic packaged emitter contains a medium area, single wirebonded, GaAlAs, 880 nm, h PerkinElmer Optoelectronics diode | |
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