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VTB1113 データシート PDF

この部品の機能は「Vtb Process Photodiodes」です。


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部品番号
VTB1113

VTB Process Photodiodes


VTB Process Photodiodes VTB1112, 1113 PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. Thes


PerkinElmer Optoelectronics
PerkinElmer Optoelectronics

データシート pdf



文字列「 VTB1113 」「 1113 」で始まる検索結果です。

部品説明

1113F

Single Color Right Angle Type LED

Features Package Product features 1113F Series Single Color Right Angle Type (2.1 X 1.0 mm) Right Angle Type (2.1 x 1.0 mm) Type, Milky White resin Outer Dimension 2.1 x 1.0 x 0.6mm ( L x W x H ) Temperature range Storage Temperature : -40℃~100℃ Operating Temperature : -30

STANLEY ELECTRIC
STANLEY ELECTRIC

 データシート pdf


2SC1113

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1113 DESCRIPTION ·With TO-66 package ·High current capacity ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications PINNING (See Fig.2) PIN

SavantIC
SavantIC

 データシート pdf


2SD1113

Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1113 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 4A APPLICATIONS ·Igniter ABSOLUTE MAXIMUM RATINGS(Ta=25

Inchange Semiconductor
Inchange Semiconductor

 データシート pdf


2SD1113

Silicon NPN Triple Diffused

2SD1113(K) Silicon NPN Triple Diffused Application Igniter Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 6 kΩ (Typ) 450 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base v

Hitachi Semiconductor
Hitachi Semiconductor

 データシート pdf


2SD1113

Silicon NPN Triple Diffused

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003

Renesas
Renesas

 データシート pdf


2SD1113K

Silicon NPN Triple Diffused

2SD1113(K) Silicon NPN Triple Diffused Application Igniter Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 6 kΩ (Typ) 450 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base v

Hitachi Semiconductor
Hitachi Semiconductor

 データシート pdf

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