VT3080S データシート PDFこの部品の機能は「Trench Mos Barrier Schottky Rectifier」です。 |
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部品番号 |
VT3080S Trench MOS Barrier Schottky Rectifier www.Datasheet.jp New Product VT3080S, VIT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS ® TO-220AB K TO-262AA FEATURES • Tren Vishay |
文字列「 VT3080 」「 3080S 」で始まる検索結果です。 |
部品説明 |
VT3080C Dual Trench MOS Barrier Schottky Rectifier www.datasheet.jp New Product VT3080C, VIT3080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses Vishay |
VT3080C-E3 Dual Trench MOS Barrier Schottky Rectifier VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3080C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VFT3080C PIN Vishay |
VT3080S-E3 Trench MOS Barrier Schottky Rectifier VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3080S 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VFT3080S PIN 1 PI Vishay |
2SK3080 Silicon N Channel MOS FET High Speed Power Switching 2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A (Z) 2nd. Edition May 1998 Features • Low on-resistance R DS(on) = 20 mΩ typ. (V GS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. D Hitachi Semiconductor |
5082-3080 SILICON PIN DIODE 5082-3080 SILICON PIN DIODE PACKAGE STYLE 15 DESCRIPTION: The ASI 5082-3080 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications. MAXIMUM RATINGS I V PDISS TJ TSTG TSOLD 250 mA 100 V 250 mW @ TC = 25 °C -65 °C to +150 °C -65 °C to +150 °C 260 °C Advanced Semiconductor |
5082-3080 (5082-3xxx) PIN Diodes for RF Switching and Attenuating PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Descrip Hewlett-Packard |
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