VSC9180 データシート PDFこの部品の機能は「Telecomm / Datacomm」です。 |
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部品番号 |
VSC9180 Telecomm / Datacomm TIMESTREAM® PRODUCT FAMILY VSC9180 VSC9180 Arapahoe - 2.5G SONET/SDH Backplane Transceiver 4Hardware Based Switch Over within Receipt of Two or Four Errored Frame Boundaries 4Loss of Signal, Loss of Vitesse Semiconductor |
文字列「 VSC9180 」「 9180 」で始まる検索結果です。 |
部品説明 |
AGR09180EF Lateral MOSFET AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global s TriQuint Semiconductor |
AGR19180EF Transistor AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1 TriQuint Semiconductor |
BL9180 CMOS LDO Regulator BL9180 Dual,3 Dual,300mA UltraUltra-low Noise CMOS LDO Regulator FEATURES Up to 300mA Output Current(Each LDO) Dual Shutdown Pins Control Each Output 90uA Operating supply current per LDO Excellent Line regulation:0.05%/V Low Dropout:220mV@300mA High Power Supply Rejection Ratio Shanghai Belling |
MA49180 Diode ( Rectifier ) American Microsemiconductor |
MA49180-118 Diode ( Rectifier ) American Microsemiconductor |
MA49180-138 Diode ( Rectifier ) American Microsemiconductor |
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