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VS-30CTH03PBF PDF Datasheet

The VS-30CTH03PBF is Hyperfast Rectifier. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 VS-30CTH03PBF
Hyperfast Rectifier

www.vishay.com VS-30CTH03PbF, VS-30CTH03-N3 Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt® TO-220AB Base common cathode 2 2 Common Anode cathode Anode 13 FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current • Designed and qualified according to JEDEC-JESD47 • Material categor

Vishay
Vishay
pdf

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Recommended search results related to VS-30CTH03PBF

Part No Description ( Function) Manufacturers PDF
VS-30CTH03-N3   Hyperfast Rectifier

www.vishay.com VS-30CTH03PbF, VS-30CTH03-N3 Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt® TO-220AB Base common cathode 2 2 Common Anode cathode Anode 13 FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperatu

Vishay
Vishay
datasheet pdf
13003   NPN Epitaxial Silicon Transistor

13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=1500mW Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C

Elite Enterprises
Elite Enterprises
datasheet pdf
13003   HIGH VOLTAGE AND HIGH SPEED SWITCH

13003 STANDARD · · 65 HSiN 13003 PEFORMANCE CURVES 1 Ic(A) SOA (DC) 120 100 % Pc Tj 0.1 80 IS/B 60 Ptot 0.01 40 20 0.001 1 hFE 10 100 Vce(V) 0 1000 0 50 100 150 Tj( ) 200 hFE - Ic 100 100 hFE hFE - Ic Tj=125 Tj=25 Tj=125 Tj=25 10 Tj= − 40

HSiN
HSiN
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13003ADA   NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers h

Unisonic Technologies
Unisonic Technologies
datasheet pdf
13003ADG   NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 13003ADG Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115

Unisonic Technologies
Unisonic Technologies
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[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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