VS-12CTQ045-1PBF データシート PDFこの部品の機能は「Schottky Rectifier ( Diode )」です。 |
検索結果を表示する |
部品番号 |
VS-12CTQ045-1PBF Schottky Rectifier ( Diode ) VS-12CTQ...SPbF, VS-12CTQ...-1PbF Series Vishay High Power Products Schottky Rectifier, 2 x 6 A VS-12CTQ...SPbF VS-12CTQ...-1PbF Base common cathode 2 Base common cathode 2 2 1 Common 3 Anode cat Vishay |
文字列「 VS12CTQ0451 」「 VS-1 」で始まる検索結果です。 |
部品説明 |
1MBI2400VS-170E Power Devices (IGBT) 6 IGBT V 6th Gen. IGBT Module V-series A compact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=175°C, Tj(op)=150°C Environmentally friendly modules · Easy assemblage, solder free options · RoHS compliant Turn-on switching ETC |
1MBI3600VS-170E Power Devices (IGBT) 6 IGBT V 6th Gen. IGBT Module V-series A compact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=175°C, Tj(op)=150°C Environmentally friendly modules · Easy assemblage, solder free options · RoHS compliant Turn-on switching ETC |
FK10VS-10 HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET FK10VS-10 HIGH-SPEED SWITCHING USE FK10VS-10 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX. 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 +0.3 –0 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 ¡VDSS ..................................... Mitsubishi Electric Semiconductor |
FK10VS-10 HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET FK10VS-10 HIGH-SPEED SWITCHING USE FK10VS-10 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX. 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 +0.3 –0 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 ¡VDSS ..................................... Powerex Power Semiconductors |
FK10VS-12 HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET FK10VS-12 HIGH-SPEED SWITCHING USE FK10VS-12 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX. 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 –0 +0.3 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 ¡VDSS ..................................... Mitsubishi Electric Semiconductor |
FK10VS-12 HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET FK10VS-12 HIGH-SPEED SWITCHING USE FK10VS-12 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX. 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 –0 +0.3 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 ¡VDSS ..................................... Powerex Power Semiconductors |
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