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Datasheet VQ1006 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | VQ1006 | N-Channel Enhancement-Mode MOS Transistor 1 Pulse width limited by junction temp. 2 Design only - not subject to production
Unless requested 3 pulse test: 300uSec, duty cycle less than
or equal to 2%
D Package 14-Lead Side Brazed (Hermetic)
.005 (0.127)
MIN
.760 (19.304)
TYP.
14 13 12 11 10
9
8
PIN NO. 1 IDENT
.290 (7.366)
TYP
123456 |
American Microsemiconductor |
|
3 | VQ1006J | N-Channel Enhancement-Mode MOS Transistor 1 Pulse width limited by junction temp. 2 Design only - not subject to production
Unless requested 3 pulse test: 300uSec, duty cycle less than
or equal to 2%
D Package 14-Lead Side Brazed (Hermetic)
.005 (0.127)
MIN
.760 (19.304)
TYP.
14 13 12 11 10
9
8
PIN NO. 1 IDENT
.290 (7.366)
TYP
123456 |
American Microsemiconductor |
|
2 | VQ1006P | N-Channel Enhancement-Mode MOS Transistor 1 Pulse width limited by junction temp. 2 Design only - not subject to production
Unless requested 3 pulse test: 300uSec, duty cycle less than
or equal to 2%
D Package 14-Lead Side Brazed (Hermetic)
.005 (0.127)
MIN
.760 (19.304)
TYP.
14 13 12 11 10
9
8
PIN NO. 1 IDENT
.290 (7.366)
TYP
123456 |
American Microsemiconductor |
|
1 | VQ1006P | N-Channel 80- and 90-V (D-S) MOSFETs VN0808L/LS, VQ1006P
Vishay Siliconix
N-Channel 80- and 90-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VN0808L VN0808LS VQ1006P 80 90
V(BR)DSS Min (V)
rDS(on) Max (W)
4 @ VGS = 10 V 4 @ VGS = 10 V 4 @ VGS = 10 V
VGS(th) (V)
0.8 to 2 0.8 to 2 0.8 to 2.5
ID (A)
0.3 0.33 0.4
FEATURES
D D D D D Low |
Vishay Siliconix |
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Número de pieza | Descripción | Fabricantes | |
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