| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | VI20200G | Dual High-Voltage Trench MOS Barrier Schottky Rectifier New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets M |
 Vishay |
|
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| CDBD20200-G | (CDBD2020-G - CDBD20200-G) Chip Schottky Barrier Rectifier Chip Schottky Barrier Rectifier CDBD2020-G Thru. CDBD20200-G Reverse Voltage: 20 to 200 Volts Forward Current: 20.0 Amp RoHS Device Features -Batch process design, excellent power dissipation offers better reverse leakage optimize board space. current and thermal resistance. 0.0 |
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| CDBD20200-HF | (CDBD2020-HF - CDBD20200-HF) Chip Schottky Barrier Rectifier Chip Schottky Barrier Rectifier CDBD2020-HF Thru. CDBD20200-HF Reverse Voltage: 20 to 200 Volts Forward Current: 20.0 Amp RoHS Device Halogen Free Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. -Low profi |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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