VI20120SG データシート PDFこの部品の機能は「High-voltage Trench Mos Barrier Schottky Rectifier」です。 |
検索結果を表示する |
部品番号 |
VI20120SG High-Voltage Trench MOS Barrier Schottky Rectifier www.Datasheet.jp New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® Vishay |
文字列「 VI20120 」「 20120SG 」で始まる検索結果です。 |
部品説明 |
VI20120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low po Vishay |
VI20120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20120C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VF20120C 123 PIN Vishay |
VI20120S High-Voltage Trench MOS Barrier Schottky Rectifier www.datasheet.jp New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20120S 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VF20120 Vishay |
VI20120S-E3 High Voltage Trench MOS Barrier Schottky Rectifier V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20120S 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VF20120S 1 Vishay |
C2D20120 Silicon Carbide Schottky Diode C2D20120–Silicon Carbide Schottky Diode Zero Recovery® Rectifier Features • • • • • • • VRRM = 1200 V IF = 20 A Qc =122 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Tempe CREE |
C2D20120D Silicon Carbide Schottky Diode C2D20120D Silicon Carbide Schottky Diode VRRM = 1200 V Zero R Features ecovery® Rectifier Package IF (TC=135˚C) = 29 A** Qc = 122 nC** • • • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Op Cree |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |