| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | VFT3080C-E3 | Dual Trench MOS Barrier Schottky Rectifier VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3080C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VFT3080C PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage dro |
 Vishay |
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0 1 2 3 4 5 6 7 8 9 |
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List of most widely used semiconductors
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| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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