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VEC2901 データシート PDF

この部品の機能は「Switching Flash ApplICations」です。


検索結果を表示する

部品番号
VEC2901

Switching Flash Applications


Ordering number : ENN8198 VEC2901 VEC2901 Features • • TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications Composite type with an NPN tra


Sanyo Semicon Device
Sanyo Semicon Device

データシート pdf



文字列「 VEC2901 」「 2901 」で始まる検索結果です。

部品説明

2SC2901

NPN SILICON TRANSISTOR

NEC
NEC

 データシート pdf


2SC2901

NPN Silicon Epitaxial Planar Transistor

ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in different p

SEMTECH
SEMTECH

 データシート pdf


2SC2901

NPN Silicon Epitaxial Planar Transistor

2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin

Bluecolour
Bluecolour

 データシート pdf


2SC2901

NPN Silicon Epitaxial Planar Transistor

ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in differen

PACO
PACO

 データシート pdf


2SK2901-01L

N-CHANNEL SILICON POWER MOS-FET

2SK2901-01L,S N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof T-Pack(L) FUJI POWER MOS-FET T-Pack(S) 10 +0.5 0.9 ±0.3 4.5 ±0.2 1.32 1.5 Max 9.3 ±0.5 1.2 ±0.2 0.8 —0.1 5.08 2.7 +

Fuji Electric
Fuji Electric

 データシート pdf


2SK2901-01S

N-CHANNEL SILICON POWER MOS-FET

2SK2901-01L,S N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof T-Pack(L) FUJI POWER MOS-FET T-Pack(S) 10 +0.5 0.9 ±0.3 4.5 ±0.2 1.32 1.5 Max 9.3 ±0.5 1.2 ±0.2 0.8 —0.1 5.08 2.7 +

Fuji Electric
Fuji Electric

 データシート pdf

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