VBT2045BP データシート PDFこの部品の機能は「Trench Mos Barrier Schottky Rectifier」です。 |
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部品番号 |
VBT2045BP Trench MOS Barrier Schottky Rectifier VBT2045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5 A FEATURES TMBS® TO-263AB K • Tren Vishay |
文字列「 VBT2045 」「 2045BP 」で始まる検索結果です。 |
部品説明 |
VBT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier New Product VBT2045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A TMBS ® TO-263AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operatio Vishay Siliconix |
VBT2045CBP Trench MOS Barrier Schottky Rectifier Rectifier www.datasheet.jp New Product VBT2045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5.0 A TMBS ® TO-263AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low Vishay |
2SD2045 Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid/ Motor and General Purpose) Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2045 120 120 6 6(Pulse10) 1 50(Tc=25°C) 150 –55 to +150 2SD2045 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A I Sanken electric |
2SD2045 NPN - PNP Plastic-Encapsulate Transistors Elektronische Bauelemente 2SD2045 NPN - PNP Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURE 40V complementary device Mounting cost and area can be cut in half High hFE MARKING 2045 PACKAGING DIMENSION Packag SeCoS |
2SD2045 Silicon NPN Darlington Power Transistor INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2045 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000 INCHANGE |
2SK2045 Ultrahigh-Speed Switching Applications Ordering number:ENN4287A N-Channel Silicon MOSFET 2SK2045 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in (trr=140ns). · Micaless package facilitating easy mounting. Package Dimensions unit:mm 20 Sanyo Semicon Device |
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