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Datasheet VB30100SG Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | VB30100SG | High-Voltage Trench MOS Barrier Schottky Rectifier www.DataSheet.co.kr
New Product
V30100SG, VF30100SG, VB30100SG & VI30100SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.437 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low p |  Vishay | rectifier |
VB3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | VB30 | Diode Schottky 100V 30A 3-Pin(2+Tab) TO-263AB T/R New Jersey Semiconductor diode | | |
| 2 | VB30 | Diode Schottky 100V 30A 3-Pin(2+Tab) TO-263AB T/R New Jersey Semiconductor diode | | |
| 3 | VB30100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier New Product
V30100C, VF30100C, VB30100C & VI30100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30100C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF30100C
123
PIN 1
PIN 2
PIN 3
TO-26 Vishay rectifier | | |
| 4 | VB30100C-M3 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB30100C-M3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TMBS ®
TO-263AB
K
2 1
VB30100C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Dio Vishay rectifier | | |
| 5 | VB30100S | High-Voltage Trench MOS Barrier Schottky Rectifier www.DataSheet.co.kr
New Product
V30100S, VF30100S, VB30100S & VI30100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power Vishay rectifier | | |
| 6 | VB30100SG | High-Voltage Trench MOS Barrier Schottky Rectifier www.DataSheet.co.kr
New Product
V30100SG, VF30100SG, VB30100SG & VI30100SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.437 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low p Vishay rectifier | | |
| 7 | VB30120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.DataSheet.co.kr
New Product
V30120C, VF30120C, VB30120C & VI30120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low p Vishay rectifier | |
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