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Datasheet VB20120SG Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | VB20120SG | High-Voltage Trench MOS Barrier Schottky Rectifier www.DataSheet.co.kr
New Product
V20120SG, VF20120SG, VB20120SG & VI20120SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low po |  Vishay | rectifier |
VB2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | VB20 | Diode Schottky 100V 20A 3-Pin(2+Tab) TO-263AB T/R New Jersey Semiconductor diode | | |
| 2 | VB20 | Diode Schottky 100V 20A 3-Pin(2+Tab) TO-263AB T/R New Jersey Semiconductor diode | | |
| 3 | VB200 | Diode Schottky 100V 20A 3-Pin(2+Tab) TO-263AB T/R New Jersey Semiconductor diode | | |
| 4 | VB20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
V20100C, VF20100C, VB20100C, VI20100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20100C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF20100C
123
PIN 1
PIN 2
PIN 3
TO- Vishay rectifier | | |
| 5 | VB20100S | High-Voltage Trench MOS Barrier Schottky Rectifier www.DataSheet.co.kr
New Product
V20100S, VF20100S, VB20100S & VI20100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.446 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power Vishay rectifier | | |
| 6 | VB20100SG | High-Voltage Trench MOS Barrier Schottky Rectifier V20100SG, VF20100SG, VB20100SG, VI20100SG
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20100SG
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VF20100SG
PIN 1
PIN 2
PIN 3
T Vishay rectifier | | |
| 7 | VB20120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier New Product
V20120C, VF20120C, VB20120C & VI20120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High Vishay rectifier | |
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