V40100PW データシート PDFこの部品の機能は「Dual High-voltage Trench Mos Barrier Schottky Rectifier」です。 |
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部品番号 |
V40100PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com V40100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS® FEATURES • Trench MOS Schottky technology � Vishay |
文字列「 V40100 」「 40100PW 」で始まる検索結果です。 |
部品説明 |
V40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com V40100C, VI40100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V40100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI40100C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES Vishay Siliconix |
V40100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier V40100C-E3, VF40100C, VB40100C-E3, VI40100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V40100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VF40100C 123 PIN 1 Vishay |
V40100G Dual High-Voltage Trench MOS Barrier Schottky Rectifier New Product V40100G, VF40100G, VB40100G & VI40100G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward Vishay Siliconix |
V40100G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V40100G 3 2 1 PIN 1 PIN 2 PIN 3 CASE VF40100G 123 PIN Vishay |
V40100K Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A at TJ = 125 °C TJ max. Package 2 x 20 A 100 V 250 A 0.63 V 1 Vishay |
V40100P Dual High-Voltage Trench MOS Barrier Schottky Rectifier New Product V40100P Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.372 V at IF = 5 A FEATURES TMBS® • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency Vishay Siliconix |
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