V3P6 データシート PDFこの部品の機能は「Surface Mount Trench Mos Barrier Schottky Rectifier」です。 |
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部品番号 |
V3P6 Surface Mount Trench MOS Barrier Schottky Rectifier New Product V3P6 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series DO-220AA (SMP) PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 60 V IFSM 60 Vishay |
文字列「 V3P6 」「 3P6 」で始まる検索結果です。 |
部品説明 |
.4M1.36FR2 Diode ( Rectifier ) American Microsemiconductor |
.4M1.36FR5 Diode ( Rectifier ) American Microsemiconductor |
02CZ36 DIODE (CONSTANT VOLTAGE REGULATION APPLICATIONS. REFERENCE VOLTAGE APPLICATIONS.) Toshiba Semiconductor |
02CZ36 DIODE (CONSTANT VOLTAGE REGULATION APPLICATIONS. REFERENCE VOLTAGE APPLICATIONS.) Toshiba Semiconductor |
03P6MG (03P4MG / 03P6MG) 300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR DATA SHEET THYRISTORS 03P4MG,03P6MG 300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR DESCRIPTION The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs with an average on-state current of 300 mA. The repeat peak off-state voltages (and reverse voltages) are 400 and 600 V. PACKAGE NEC |
0402DF-360XJR Chip Inductors Document 1069-1 Chip Inductors – 0402DF (1005) • Higher inductance values than other 0402 inductors • Ferrite construction for high current handling • 25 inductance values from 20 nH to 3.3 µH • Ideal for use in both mobile and infrastructure equipment • Equall Coilcraft |
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